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Simple model for calculating the ratio of the carrier capture and escape times in quantum-well lasers

dc.contributor.authorRomero, Beatriz
dc.contributor.authorArias, Julia
dc.contributor.authorEsquivias, Ignacio
dc.contributor.authorCada, Michael
dc.date.accessioned2014-02-03T12:43:30Z
dc.date.available2014-02-03T12:43:30Z
dc.date.issued2000-03-20
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/10115/12023
dc.description.abstractWe have developed a simple model for the carrier capture and escape processes in quantum-well (QW) lasers, which yields an analytical expression for the ratio of the carrier capture and escape times. It predicts a decrease in the escape time with injected carrier density due to the state filling effect. It also shows an exponential dependence of the escape time on the effective barrier height and on the inverse of the temperature. A comparison between experimental and calculated values for InGaAs/GaAs QW lasers is presented showing a good agreementes
dc.language.isoenes
dc.publisherAmerican institute of Physicses
dc.rightsAtribución-NoComercial-SinDerivadas 3.0 España*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectMODULATION BANDWIDTH; NONLINEAR GAIN; TRANSPORTes
dc.titleSimple model for calculating the ratio of the carrier capture and escape times in quantum-well laserses
dc.typeinfo:eu-repo/semantics/articlees
dc.identifier.doi10.1063/1.126077es
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses
dc.subject.unesco3307 Tecnología Electrónicaes
dc.subject.unesco3306.02 Aplicaciones Eléctricases
dc.description.departamentoTecnología Electrónica


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Atribución-NoComercial-SinDerivadas 3.0 EspañaExcept where otherwise noted, this item's license is described as Atribución-NoComercial-SinDerivadas 3.0 España